5pcs IRFZ44 N-Channel HEXFET Power MOSFET 49A 55V IRFZ44N Transistor Gate FET TO-220

$4.00

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Description

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55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Benefits:
RoHS Compliant
Low RDS(on)
Industry-leading quality
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
175°C Operating Temperature

Target Applications:
Consumer Full-Bridge
Full-Bridge
Push-Pull

Electrical Characteristics (TJ=25C unless otherwise noted):
Drain-to-Source Breakdown Voltage (VGS = 0V, ID = 250uA): 55V min.
Breakdown Voltage Temp. Coefficient (Reference to 25C, ID = 1mA): 0.058V/C typ.
Static Drain-to-Source On-Resistance (VGS = 10V, ID = 25A): 17.5mΩ max.
Gate Threshold Voltage (VDS = VGS, ID = 250uA): 2.0V to 4.0V
Forward Transconductance (VDS = 25V, ID = 25A): 19S min.
Drain-to-Source Leakage Current (VDS = 55V, VGS = 0V): 25uA max.
Manufactured by: International Rectifier

Package Included:
5 x IRFZ44 N-Channel HEXFET Power MOSFET 49A 55V

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