10pcs IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 HEXFET Power Transistor



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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated


Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of

The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.


Package Included:

10 x IRF3205 IR MOSFET N-CHANNEL HEXFET Power Transistor

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